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| MITSUBISHI IGBT MODULES CM150TL-12NF HIGH POWER SWITCHING USE CM150TL-12NF IC ................................................................... 150A VCES ............................................................ 600V Insulated Type 6-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 11 7 13.62 40.78 12 35 12 A B U V W B (13.5) 32 6-M5 NUTS 10.75 (19.75) 12 22 23 12 23 12 23 12 12 (SCREWING DEPTH) 11.75 55 1 1 1 1 8 P 22 -0.5 16 23.2 +1 3 WP VP LABEL 120 106 0.5 17 17 2-5.5 MOUNTING HOLES UP CN N Housing Type of A and B (J.S.T.Mfg.Co.Ltd) A = B8P-VH-FB-B, B = B2P-VH-FB-B P UP-1 UP-2 U CN-5 CN-6 CN-3 CN-4 VP-1 VP-2 V WP-1 WP-2 W CN-1 CN-2 B CN-7 CN-8 N NC NC NC CIRCUIT DIAGRAM Jun. 2004 MITSUBISHI IGBT MODULES CM150TL-12NF HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, TC = 93C*1 Pulse Pulse TC = 25C Conditions Ratings 600 20 150 300 150 300 730 -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 350 Unit V V A A A A W C C V N*m N*m g (Note 2) (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 15mA, VCE = 10V VGE = VGES, VCE = 0V IC = 150A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 150A, VGE = 15V VCC = 300V, IC = 150A VGE1 = VGE2 = 15V RG = 4.2, Inductive load switching operation IE = 150A IE = 150A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to fin, Thermal compound Applied (1/6 module)*2 Tj = 25C Tj = 125C Min. -- 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.2 Limits Typ. -- 7 -- 1.7 1.7 -- -- -- 600 -- -- -- -- -- 2.5 -- -- -- 0.085 -- Max. 1 8 0.5 2.2 -- 23 2.8 0.9 -- 120 100 300 300 150 -- 2.8 0.17 0.31 -- 42 Unit mA V A V nF nF nF nC ns ns ns ns ns C V C/W C/W C/W *1 : Tc measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause neglible temperature rise. Jun. 2004 MITSUBISHI IGBT MODULES CM150TL-12NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 300 250 200 150 100 VGE = 20V 4 15 13 Tj = 25C 12 VGE = 15V 3 11 2 10 50 0 8 0 2 4 6 8 9 10 1 Tj = 25C Tj = 125C 0 0 50 100 150 200 250 300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 10 Tj = 25C EMITTER CURRENT IE (A) 8 5 3 2 6 102 7 5 3 2 4 IC = 150A IC = 300A 2 IC = 60A 0 6 8 10 12 14 16 18 20 Tj = 25C Tj = 125C 0 1 2 3 4 5 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 Cies SWITCHING TIME (ns) 3 2 tf td(off) 101 7 5 3 2 102 7 5 td(on) tr Conditions: VCC = 300V VGE = 15V RG = 4.2 Tj = 125C Inductive load 2 3 5 7 103 Coes Cres 100 7 5 3 2 3 2 VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 101 1 10 2 3 5 7 102 COLLECTOR CURRENT IC (A) Jun. 2004 MITSUBISHI IGBT MODULES CM150TL-12NF HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse, 7 5 TC = 25C 3 Under the chip 2 10-1 7 5 3 2 10-1 7 5 3 2 102 7 5 3 2 Irr trr 101 1 10 2 3 5 7 102 Conditions: VCC = 300V VGE = 15V RG = 4.2 Tj = 25C Inductive load 23 5 7 103 IGBT part: 10-2 Per unit base = 7 5 Rth(j-c) = 0.17C/W FWDi part: 3 Per unit base = 2 Rth(j-c) = 0.31C/W -3 10 10-2 7 5 3 2 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 EMITTER CURRENT IE (A) TIME (s) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) 101 7 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) Conditions: VCC = 300V VGE = 15V 3 IC = 150A Tj = 125C 2 Inductive load C snubber at bus 101 Esw(off) 7 7 5 5 3 2 102 Esw(off) SWITCHING LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) 5 3 2 Esw(on) 100 7 5 3 2 10-1 1 10 Conditions: VCC = 300V VGE = 15V RG = 4.2 Tj = 125C Inductive load C snubber at bus 2 3 5 7 102 2 3 5 7 103 Esw(on) 2 3 5 7 101 2 3 5 7 102 100 0 10 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG () RECOVERY LOSS vs. IE (TYPICAL) 101 7 RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 101 7 RECOVERY LOSS (mJ/pulse) RECOVERY LOSS (mJ/pulse) 5 3 2 5 3 2 Err Conditions: VCC = 300V VGE = 15V RG = 4.2 Tj = 125C Inductive load C snubber at bus 2 3 5 7 102 2 3 5 7 103 Err Conditions: VCC = 300V VGE = 15V IE = 150A Tj = 125C Inductive load C snubber at bus 2 3 5 7 101 2 3 5 7 102 100 7 5 3 2 100 7 5 3 2 10-1 1 10 10-1 0 10 EMITTER CURRENT IE (A) GATE RESISTANCE RG () Jun. 2004 MITSUBISHI IGBT MODULES CM150TL-12NF HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 150A 16 VCC = 200V VCC = 300V 12 8 4 0 0 200 400 600 800 1000 GATE CHARGE QG (nC) Jun. 2004 |
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